讲座信息
Development of 3D Integrated Circuits: A Materials and Reliability Perspective
Speaker : Prof. Dr. PAUL S. HO,
(Cockrell Family Regents Chair in Engineering,
Director of the Laboratory for Interconnect
and Packaging, University of Texas at Austin)
Time: 14:30-16:30, Thursday, 26th Mar. 2015
Location: 邯郸校区微电子楼B213会议室
Abstract:
Three-dimensional (3D) integration has emerged as a promising solution to overcome the wiring limit imposed on chip performance, power dissipation and packaging form factor beyond the 14nm technology node. This talk will first elucidate the need and application of 3D IC, particularly for the mobile communication industry, then the current studies on thermal stresses and reliability of through-silicon via (TSV) structures will be reviewed. TSV is a critical element connecting die-to-die in the integrated stack structure where the thermal expansion mismatch between copper (Cu) vias and silicon (Si) can induce complex stresses to drive interfacial failure and Cu extrusion, degrading the performance and reliability of 3D ICs. Recent results from studies of stress and plasticity characteristics of Cu TSV structures are reviewed, including wafer curvature, micro-Raman spectroscopy and synchrotron x-ray micro-diffraction techniques.
Biography:
Dr. Paul S. Ho is the Director of the Laboratory for Interconnect and Packaging at The University of Texas at Austin. He received his Ph.D. degree in physics from Rensselaer Polytechnic Institute. He joined the Materials Science and Engineering Department at Cornell University in 1966 and became an Associate Professor in 1972. In 1972, he joined the IBM T.J. Watson Research Center and became Senior Manager of the Interface Science Department in 1985. In 1991, he joined the faculty at The University of Texas at Austin and was appointed the Cockrell Family Regents Chair in Engineering. His current research is in the areas of materials science and reliability for interconnect and packaging for microelectronics. He has received a number of awards, including the Callinan Award from the Electrochemical Society in 2000 and the University Research Award from the Semiconductor Industry Association in 2007. He is a Fellow of IEEE, the American Physical Society and the American Vacuum Society.
